Aluminum induced crystallization. The annealing process results in an al...
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Aluminum induced crystallization. The annealing process results in an almost complete exchange of the two layers and leads to the Jun 15, 2006 · It has been known since long that amorphous silicon in contact with certain metals crystallizes at temperatures far below of the temperature of 600 °C normally required for solid phase crystallization [1]. Feb 9, 2006 · Wetting and crystallization at grain boundaries: Origin of aluminum-induced crystallization of amorphous silicon J. Our experiments resulted in continuous large-grained poly-Si Nov 12, 2001 · Al-induced crystallization of co sputtered hydrogenated amorphous germanium films, deposited at 220 °C, onto crystalline silicon substrates is investigated by R. Y. Dec 1, 2013 · Approximately a decade after the suggestion of Nast et al. Mar 20, 2017 · The effect of reactive ion etching using chlorine or fluorine-based plasmas on aluminum-induced crystallization (AIC) of silicon on fused silica glass substrates was investigated with the goal of chemically modifying the substrate surface and thereby influencing the crystallization behavior. The aluminum-induced layer exchange (ALILE) process is a special form of metal-induced crystallization (MIC) where a stack of glass/Al/a-Si is transformed into a glass/poly-Si/Al (Si) stack Aug 1, 2005 · This work was an experimental study of the aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) for the fabrication of polycrystalline silicon film. The processing technique investigated is aluminum-induced crystallization (AIC) of sputtered amorphous silicon on Al-coated glass substrates. Apr 1, 2002 · We investigated the aluminum-induced crystallization of amorphous silicon (a-Si) during the aluminum-induced layer exchange (ALILE) process, in which a stack of glass/Al/a-Si is transformed into a glass/polycrystalline silicon (poly-Si)/Al (Si) structure by an annealing step well below the eutectic temperature of the Al/Si system. Thus, the present study is aimed at investigating the influence of the thickness of an individual aluminum layer in (Al/a-Si) n multilayered films on the kinetics and mechanism of aluminum-induced crystallization of amorphous silicon by means of the DSC method.
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